Semiconductor Material and Device Characterization
John Wiley & Sons, 10.02.2006. - 800 страница
This Third Edition updates a landmark text with the latest findings
The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques.
Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including:
In addition, readers will find fully updated and revised sections in each chapter.
Plus, two new chapters have been added:
Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials.
An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
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Chapter 2 Carrier and Doping Density
Chapter 3 Contact Resistance and Schottky Barriers
Chapter 4 Series Resistance Channel Length and Width and Threshold Voltage
Chapter 5 Defects
Chapter 6 Oxide and Interface Trapped Charges Oxide Thickness
Chapter 7 Carrier Lifetimes
Chapter 8 Mobility
Chapter 9 Chargebased and Probe Characterization